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发明名称
A high breakdown voltage semiconductor device having a semi-insulating layer
摘要
申请公布号
EP0615291(B1)
申请公布日期
1997.05.21
申请号
EP19940301317
申请日期
1994.02.24
申请人
HITACHI, LTD.
发明人
MURAKAMI, SUSUMU;FUKUDA, TAKUYA;SHIMIZU, YOSHITERU;SUGAWARA, YOSHITAKA
分类号
H01L29/06;H01L29/40;(IPC1-7):H01L29/06
主分类号
H01L29/06
代理机构
代理人
主权项
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