发明名称 GATE DRIVE OF SEMICONDUCTOR SWITCHING DEVICE
摘要 PROBLEM TO BE SOLVED: To keep a plurality of semiconductor switching device of which a semiconductor switch is composed in on-state for a long period. SOLUTION: A driver has a transformer 9 whose secondary winding is connected to the gates of a plurality of switching devices 1a, a trigger generator 7 which is connected to the primary winding of the transformer 9 and bypass capacitors 12 which are connected to the secondary winding of the transformer 9 and the cathodes of the switching devices 1a and connected to an AC power supply 10 through rectifying diode bridges 13 and a transformer 11. In this constitution, by providing a resistor 7g between a turn-on capacitor 7c and a turn-on power supply 7e of which the trigger generator 7 is composed and Zener diodes 16 in parallel with the capacitors 12 and, further, by providing a reactor in parallel with the resistor 7g, the on-periods of the switching devices 1a can be extended.
申请公布号 JPH09135566(A) 申请公布日期 1997.05.20
申请号 JP19950287258 申请日期 1995.11.06
申请人 MITSUBISHI HEAVY IND LTD 发明人 KAWABATA OSAMU;SHINODA NAONOBU;KAMEI TOSHINORI
分类号 H02M1/08;H02M7/515 主分类号 H02M1/08
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