发明名称 |
Method for making inversion mode diamond electron source |
摘要 |
An electron source including selectively impurity doped semiconductor diamond wherein regions of selectively impurity doped regions are inverted with respect to the charge carrier population to provide a conductive path traversed by electrons subsequently emitted into a free-space region from the electron emitter. An inversion mode electron emission device including a selectively impurity doped semiconductor diamond electron emitter, for emitting electrons; a control electrode; and an anode for collecting emitted electrons wherein operation of the device relies on the inducement of an inversion region to facilitate electron transit to an electron emitting surface of the electron emitter.
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申请公布号 |
US5631196(A) |
申请公布日期 |
1997.05.20 |
申请号 |
US19950385027 |
申请日期 |
1995.02.07 |
申请人 |
MOTOROLA |
发明人 |
KANE, ROBERT C.;ZHU, XIAODONG T. |
分类号 |
H01J1/308;(IPC1-7):H01L21/465 |
主分类号 |
H01J1/308 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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