发明名称 |
Formation of thin-film patterns of a metal oxide |
摘要 |
A composition for formation of thin-film patterns of a metal oxide which comprises a metal alkoxide and one or more nitro compounds selected from the group consisting of nitrobenzyl alcohol derivatives, nitrobenzaldehyde derivatives, nitrostyrol derivatives, nitroacetophenone derivatives, nitroanisole derivatives and nitrofuran derivatives. This composition is applied to a substrate which is then irradiated with light to perform patterning by utilizing the difference in solubility between the light-irradiated portion and the non-light-irradiated portion, attributed to the photodecomposition reaction of the irradiated portion. A photoreactive compound is added to a starting solution which contains an organic solvent and an organic metal compound, the solution is misted, and the resulting mist is deposited on a substrate while irradiating with light.
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申请公布号 |
US5630872(A) |
申请公布日期 |
1997.05.20 |
申请号 |
US19950570576 |
申请日期 |
1995.12.11 |
申请人 |
MITSUBISHI MATERIALS CORPORATION |
发明人 |
OGI, KATSUMI;YONEZAWA, TADASHI;SOYAMA, NOBUYUKI;KAGEYAMA, KENSUKE |
分类号 |
C03C17/25;C23C18/14;C23C26/00;H01L21/314;H01L21/316;(IPC1-7):C23C18/14 |
主分类号 |
C03C17/25 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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