| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having capacity elements using as dielectric a ferroelectric made of a ferroelectric material such as SrTiO3 , BaTiO3 and (Ba, Sr)TiO3 . SOLUTION: When forming a capacitor on a semiconductor substrate 1, a capacitor lower electrode 12 is first formed. After the capacitor lower electrode 12 is formed, an insulating film 13 is selectively etched until the lower electrode 12 is exposed and an opening portion 13a is thereby formed in the insulating film 13. Next, after a ferroelectric film 14 is formed in the opening portion 13a and on the insulating film 13, the ferroelectric film 14 is polished by a chemical-mechanical polishing method and removed such that the ferroelectric film 14 remains in the opening portion 13a. A capacitor upper electrode 14 is thereafter formed on the ferroelectric film 14. |
