发明名称 Sintered silicon nitride-based body
摘要 A sintered silicon nitride-based body comprising 20% or less by weight of a grain boundary phase and the balance being a major phase of grains of silicon nitride and/or sialon, wherein the major phase contains a grain phase of a beta -Si3N4 phase and/or a beta '-sialon phase, and a quantitative ratio of the grain phase of the beta -Si3N4 phase and/or the beta '-sialon phase is in a range of 0.5 to 1.0 relative to the major phase; the grain boundary phase contains Re2Si2O7 (wherein Re represents a rare-earth element other than Er and Yb) as a first crystal component and at least one of ReSiNO2, Re3Al5O12, ReAlO3, and Si3N4.Y2O3 as a second crystal component; and a quantitative ratio of the first and second crystal components in the grain boundary phase to the grain phase of beta -Si3N4 phase and/or the beta '-sialon phase ranges from 0.03 to 1.6. The sintered body is produced by mixing a specific sintering aid and silicon nitride-based powder, sintering the mixture and heat treating the sintered body for nucleation and crystal growth within the temperature range of from 1050 DEG to 1550 DEG C.
申请公布号 US5631200(A) 申请公布日期 1997.05.20
申请号 US19960597705 申请日期 1996.02.07
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD. 发明人 UKEGAWA, HARUTOSHI;HIGUCHI, MATSUO
分类号 C04B35/584;C04B35/593;C04B35/597;C04B35/599;C04B41/00;(IPC1-7):C04B35/587 主分类号 C04B35/584
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