发明名称 |
Sintered silicon nitride-based body |
摘要 |
A sintered silicon nitride-based body comprising 20% or less by weight of a grain boundary phase and the balance being a major phase of grains of silicon nitride and/or sialon, wherein the major phase contains a grain phase of a beta -Si3N4 phase and/or a beta '-sialon phase, and a quantitative ratio of the grain phase of the beta -Si3N4 phase and/or the beta '-sialon phase is in a range of 0.5 to 1.0 relative to the major phase; the grain boundary phase contains Re2Si2O7 (wherein Re represents a rare-earth element other than Er and Yb) as a first crystal component and at least one of ReSiNO2, Re3Al5O12, ReAlO3, and Si3N4.Y2O3 as a second crystal component; and a quantitative ratio of the first and second crystal components in the grain boundary phase to the grain phase of beta -Si3N4 phase and/or the beta '-sialon phase ranges from 0.03 to 1.6. The sintered body is produced by mixing a specific sintering aid and silicon nitride-based powder, sintering the mixture and heat treating the sintered body for nucleation and crystal growth within the temperature range of from 1050 DEG to 1550 DEG C.
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申请公布号 |
US5631200(A) |
申请公布日期 |
1997.05.20 |
申请号 |
US19960597705 |
申请日期 |
1996.02.07 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
UKEGAWA, HARUTOSHI;HIGUCHI, MATSUO |
分类号 |
C04B35/584;C04B35/593;C04B35/597;C04B35/599;C04B41/00;(IPC1-7):C04B35/587 |
主分类号 |
C04B35/584 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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