| 摘要 |
PROBLEM TO BE SOLVED: To determine the distribution of bonding state of a target element in the depth direction with high accuracy by scanning the incident light energy while fixing the kinetic energy of detected photoelectron, observing a plurality of kinetic energies of photoelectron from the photoelectron spectrum to obtain the intensity of photoelectron, and then subjecting the intensity of photoelectron to integral transformation. SOLUTION: A sample 4 on a sample stage 5 is irradiated with the light from a light source 1 subjected to monochromatization through a spectrometer 2 and photoelectrons emitted from the surface thereof are passed through an electron energy analyzer 6 thus detecting photoelectrons having a specified kinetic energy. The incident light energy is scanned by controlling the spectrometer 2 and the photoelectron spectrum of a target element under bonded state is measured. At the same time, the intensity of incident light is measured by an incident light intensity monitor 8 and stored in a storing/processing unit 9. The unit 9 extracts the peak intensity of photoelectron from the spectrum and stores the peak intensity. Kinetic energy of photoelectron is varied a plurality of times by controlling the analyzer 6 and the intensity of each photoelectron is stored in the unit 9. The unit 9 converts the kinetic energy into the escape depth of photoelectron and determined the distribution of bonding state of a target element in the depth direction through integral transformation. |
