发明名称 |
Method of fabricating quantum bridges by selective etching of superlattice structures |
摘要 |
A quantum bridge structure including wires of a semiconductor material such as silicon which are formed by selectively etching a superlattice of alternating layers of at least two semiconductor materials. The quantum bridge is useful as a photo emission device, a photo detector device, and a chemical sensor. The wires exhibit improved electrical conduction properties due to decreased Coulomb scattering.
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申请公布号 |
US5630905(A) |
申请公布日期 |
1997.05.20 |
申请号 |
US19950465493 |
申请日期 |
1995.06.05 |
申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
LYNCH, WILLIAM T.;WANG, KANG L.;TANNER, MARTIN O. |
分类号 |
H01L29/12;H01L31/0352;H01L33/04;H01L33/06;(IPC1-7):H01L21/20 |
主分类号 |
H01L29/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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