发明名称 |
Quaternary collector InAlAs-InGaAlAs heterojunction bipolar transistor |
摘要 |
An InAlAs/InGaAlAs heterojunction bipolar transistor that includes a constant quaternary InGaAlAs collector layer. Graded InGaAlAs collector layers are provided on each side of the quaternary collector layer to minimize transitions through the constant collector layer. The InAlAs/InGaAlAs HBT may also include one or more of a graded InGaAlAs emitter-base transition region, a graded-doping InGaAs base layer, and a graded-composition InGaAlAs base layer.
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申请公布号 |
US5631477(A) |
申请公布日期 |
1997.05.20 |
申请号 |
US19950490440 |
申请日期 |
1995.06.02 |
申请人 |
TRW INC. |
发明人 |
STREIT, DWIGHT C.;OKI, AARON K.;TRAN, LIEM T. |
分类号 |
H01L29/73;H01L21/331;H01L29/08;H01L29/205;H01L29/737;(IPC1-7):H01L31/032;H01L31/033 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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