| 摘要 |
PROBLEM TO BE SOLVED: To devise the inspecting method not limited by the dimension of a probe chip and not destroying a wafer at all by a method wherein the first mask pattern is exposed to the light in a specific wavelength region and after developing the residual part not yet developed by the first exposure using the second exposure, the photoresist structure formed by the second development is to be measured. SOLUTION: In the first mask pattern, opaque regions 26A-26E are formed on a transparent substrate 24. When an induction substrate is exposed through the intermediary of the opaque regions 26A-26E, the exposed part makes a latent image if the photoresist is posi-type. Accordingly, when the substrate is exposed using the second, mask pattern having opaque region 34 larger than the opaque region 26c, the latent image of 26c only is left while the other ones 26A, 26B, 26D and 26E are removed thereby a photoresist structure 12c only appears after the development. Through these procedures, the probe 18 of the inter atomic force microscope can be easily brought into contact with the whole sidewall of the resist structure 12 and the substrate thereby enabling the precise measurement to be made using no specific probe at all having no posibility of damaging the substrate at all. |
