| 摘要 |
PROBLEM TO BE SOLVED: To improve the conversion efficiency and light confining ability of a photovoltaic element by forming a groove at the peripheral part of a multilayer body on one main surface of a substrate by removing at least the multilayer body. SOLUTION: In all film forming processes, films are formed by using such a method as the plasma CVD method, sputtering method, etc., without using the mask which is used in the conventional process. After completing the film forming processes, a groove 1 is formed in the peripheral part of a multilayer body composed of an intrinsic amorphous silicon layer 8, a p-type amorphous silicon layer 9, and a conductive thin film 3 on the first main surface of an n-type single-crystal silicon substrate 7 by irradiating the part with a laser beam. Therefore, a photovoltaic element which is improved in light confining ability by an AR coat coating the entire surface of the thin film 3 and in conversion efficiency by the enlargement of the effective area is obtained. In addition, the mass-productivity of the element is improved, because no mask is required in the manufacturing process of the element. |
