| 摘要 |
PROBLEM TO BE SOLVED: To reduce the light absorbing quantity of a reflectivity control film containing at least one II-VI compound semiconductor film so as to suppress the generation of heat from a semiconductor light emitting element by providing the control film in a light emitting section on the light emitting surface of the element. SOLUTION: A reflectivity control film is constituted in a multilayered film composed of dielectric films and II-VI compound semiconductor films. The dielectric films are made of SiO2 , Al2 O3 , etc., having a low refractive index and respectively form coating materials 1, 5, and 7. The II-VI compound semiconductor films are made of ZnSe, etc., having a high refractive index and respectively form coating materials 2, 4, and 6. In order to reduce the laminating cycle of the multilayered film as much as possible and to obtain high reflectivity, the material having a high refractive index is used. Therefore, the characteristics and reliability of a semiconductor light emitting element are improved by suppressing the heat generation caused by absorbed light by preventing the useless light absorption of the reflectivity control film. |
