| 摘要 |
PROBLEM TO BE SOLVED: To obtain a laser irradiation effect whose uniformity is high and to make the life of a laser light source long by a method wherein an energy distribution in the direction of a line width in the focus of a linear laser beam used to irradiate a semiconductor film face is specified. SOLUTION: When a face, to be irradiated, composed of a semiconductor film is irradiated with a linear laser beam which uses a pulsed laser as a light source, an energy distribution in the direction of a line width in the focus of the linear laser beam is specified. That is to say, a maximum energy is set at 1, a beam width at an energy of 0.95 is designated as L1, and a beam width at an energy of 0.70 is designated as L1+L2 (a line width on one side) + L3 (a line width on the other side). Then, expressions of inequality of 0.5 L1<=L2<=L1 and 0.5 L1<=L3<=L1 are to be satisfied. The laser beam obtained by this configuration has a depth of focus within about±400μm, and it is possible to obtain a margin of about two to eight times with reference to the undulation of a substrate or a film. |
