SEMICONDUCTOR MEMORY AND MEMORY CARD

摘要

PROBLEM TO BE SOLVED: To unnecessitate the laser cut process for storing a defective data line and to reduce a chip size. SOLUTION: Flash memory cells 41-4n (41'-4n') which functions as an element for storing a defective data line are provided, a laser cut process such as adopting a poly-silicon fuse is unnessecitated, and manufacturing man-hour is reduced. Writing in such flash memory cell is made valid for a defect caused after an use period elapses to some extent differing from the poly-silicon fuse. Also, by functioning the flash memory cell as an element for judging everything after verifying, the number of elements is reduced, reducing a chip size of a semiconductor memory is achieved.