| 摘要 |
PROBLEM TO BE SOLVED: To obtain a photomask with which the erroneous detection of the foreign matter defect inspection of the photomask does not arise by using a transparent material for auxiliary patterns for the purpose of correcting an optical proximity effect. SOLUTION: The transparent material is used for the auxiliary patterns for the purpose of correcting the optical proximity effect of the photomask formed by using a technique of the optical proximity effect correction. Namely, SOG shifters 13 for inverting the phase 180 deg. with exposing light (i-line) are arranged at the ends of chromium patterns 11 of the photomask. Then, the resist patterns 12 at the time the substrate is exposed are eventually relieved of the deterioration in the patterns of the ends. The principle thereof is based on the fact that the SOG shifters 13 act like chromium-less phase shifts and that the patterns are resolved as if the chromium exists along the edges of the SOG shifters 13 by the phase shift effect. The erroneous detection of the foreign matter defect occurring in the auxiliary patterns does not arise any more as the light transparent material is used when the photomask is subjected to the inspection of the foreign matter. |
