| 发明名称 |
A semiconductor chip and a method of manufacture thereof |
| 摘要 |
A polycrystalline silicon film is formed on the surface of a semiconductor substrate. An oxide film having a first impurity concentration is formed to cover the polycrystalline silicon film. A polycrystalline silicon film and a refractory metal silicide are formed on the surface of the oxide film having the first impurity concentration. An oxide film having a second impurity concentration higher than the first impurity concentration is formed to cover the polycrystalline silicon film and the refractory metal silicide. The third conductive layer is formed on the surface of the oxide film having the second impurity concentration. |
| 申请公布号 |
HK58997(A) |
申请公布日期 |
1997.05.16 |
| 申请号 |
HK19970000589 |
申请日期 |
1997.05.08 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
ISAO TOTTORI |
| 分类号 |
H01L21/3205;H01L21/316;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L21/310 |
主分类号 |
H01L21/3205 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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