| 摘要 |
PROBLEM TO BE SOLVED: To reduce the amount of Cu diffused in magnetic layers by constituting the nonmagnetic layer of a magnetoresistive element having a first magnetic layer, the nonmagnetic layer which is formed on the magnetic layer in a tightly contacting state, and a second magnetic layer which is formed on the nonmagnetic layer in a tightly contacting state of an alloy of Cu and Au. SOLUTION: A base layer 2 composed of Ta, a magnetic layer 3 composed of an Ni-Fe alloy containing 83% Ni atoms and 17% Fe atoms, a nonmagnetic layer 4 composed of a Cu-Au alloy containing 75% Cu atoms and 25% Au atoms, a magnetic layer 5 composed of the Ni-Fe alloy containing 83% Ni atoms and 17% Fe atoms, an antiferromagnetic layer composed of an Fe-Mn alloy, and a protective layer 7 composed of Ta are successively deposited on a silicon substrate 1 having a main surface composed of the (100)-plane. Since the diffusion of Cu in the nonmagnetic layer 4 adjacent to the magnetic layers 3 and 5 is small and the crystal lattice of the layer 4 is not changed by heat treatment, the diffusion of the Cu into the magnetic layers 3 and 5 can be reduced. |
