| 摘要 |
PROBLEM TO BE SOLVED: To easily measure a phase error according to the direction and extend of a shift of a pattern by making use of the phenomenon that the pattern exposed to a wafer shifts owing to defocusing. SOLUTION: A phase inversion pattern 30 of constant width which shifts the phase of light transmitted through a specific area of the transparent substrate of a phase inversion mask 1 is arrayed at constant intervals and a light shield film 20 with specific width is formed at the border part between the transparent substrate area and phase inversion pattern 30 to prepare a pattern for phase error measurement. Then the water is patterned by using the phase inversion mask 1 and then the direction and extent of the shift of the pattern exposed to the wafer are measured and compared to measure the phase error of the phase inversion mask 1. |
