FORMATION OF GATE ELECTRODE OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a formation method of a gate electrode of a semiconductor device having low surface resistance. SOLUTION: The electrode formation method includes, as a feature, the step wherein a polysilicon layer 16 is vapor deposited on a gate insulation film 14 formed on a semiconductor substrate 10, the stage wherein the surface of the polysilicon layer 16 is flattened, and the stage wherein a silicide layer 20 is formed on the polysilicon layer 16. In the stage wherein the silicide layer 20 is formed, after a metal material is vapor deposited on the polysilicon layer 16, it is desirable that the surface is made into silicide or the silicide of metal material is vapor depositied on the polysilicon layer 16. Relating to the metal material, one of such fire proof metals as titanium, tungsten, cobalt, or molybdenum is desirable.