| 摘要 |
PROBLEM TO BE SOLVED: To obtain sufficient resolution even on an existing exposing device by a method wherein the base layer is etched to the middle part, the second resist pattern is formed on a substrate leaving a resist pattern, and the base film is etched using the combined resist pattern as a mask. SOLUTION: One half of film thickness of a base layer 12 is etched off using the first resist pattern 15 as a mask, and the second resist film 16 is adhered thereto. The thickness of resist of the resist film formed by compounding the first and the second resist films is thickly formed on the first resist pattern 15, and thinly formed on the recessed part of the first resist pattern. Then, a prebaking operation is conducted, the resist film 16 is exposed, developed through the second resist pattern 17, and the second resist pattern 18 is formed. Then, a post baking operation is conducted, the remaining film of the base film is etched using the compounded resist pattern as a mask, and a contact hole 21 is formed. |
