| 摘要 |
PROBLEM TO BE SOLVED: To effectively reduce smearing charges without deteriorating dark current characteristics. SOLUTION: In this image sensing element, a light receiving part 1, a reading gate part 18 and a transfer channel region 14 are arranged and formed on a silicon substrate 11, and a transfer electrode 20 is selectively formed on the reading gate part 18 and the transfer channel region 14, via a gate insulating film 19. An interlayer insulating film 22 is formed on the whole part of a transfer electrode 20, and a light shielding film 24 covering the transfer electrode 20 as a lower layer is formed on the interlayer insulating film 22. A low reflection film 23 composed of a polycrystalline silicon layer of several nm to several tens nm in thickness is formed just under the light shielding film 24. The low reflection film 23 can be formed by ion-implanting arsenic (As) of about 5×10<15> cm<-2> in the polycrystalline silicon layer, and recrystallizing the polycrystalline silicon layer by heat treatment at 800-1000 deg.C.
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