| 摘要 |
PROBLEM TO BE SOLVED: To execute a patterning on a silicon nitride film to form a pattern, which is less tapered than a conventional pattern and consists of the silicon nitride film, by a method wherein after oxygen ions are implanted in the silicon nitride film by a prescribed dose, a dry etching of the silicon nitride film is performed using a resist pattern as a mask. SOLUTION: A silicon oxide film 2 is first oxidized thermally on a silicon substrate 1 to form in a thickness of 140Åor thereabouts and thereafter, a silicon nitride film 3 is formed in a thickness of 1200Åand a resist pattern 4 is obtained by a photolitho process. Then, oxygen ions are implanted in the film 3 at a dose of 1×10<16> cm<-2> or more using the pattern 4 as a mask. Then, a normal parallel-plate RIE method is used and a dry etching of the film 3 is performed. |
