| 摘要 |
PROBLEM TO BE SOLVED: To provide a resist pattern forming method capable of forming resist patterns which are uniform in dimensions keeping them unchanged in cost and throughput. SOLUTION: When a resist pattern is formed on a processed film 11 possessed of two surfaces S1 and S2 different from each other in height above a reference level 12, a height difference (H1 -H2 ) between the surfaces S1 and S2 of different height above a reference level 12 is so controlled as to make the thicknesses T1 and T2 of a resist pattern 13 applied onto the surfaces S1 and S2 identical to the dimensions B1 and B2 of a corresponding resist pattern actually obtained basing on a wave-shaped curve which indicates a relation between a resist pattern of dimensions A and an actual resist pattern of dimensions B obtained by the use of a mask pattern designed for forming the resist pattern of dimensions A of resist 13 of thickness T. |
