发明名称 METHOD OF ETCHING SUBSTRATE BY CHEMICAL BEAM
摘要 PROBLEM TO BE SOLVED: To simplify the operation of an etching sequence by simultaneously generating two chemical beams which are converged toward a substrate or epitaxial layer in an ultrahigh vacuum and maintaining the epitaxial layer at such a temperature that can evaporate the resulted product of the reaction between the element of the substrate and the substance contained in the chemical beams. SOLUTION: A substrate manipulator 3 winch holds a substrate 2 during treatment is provided in an epitaxial chamber 1 and, when an etching sequence is operated, two chemical beams which are converged toward the substrate 2 of an epitaxial layer are simultaneously generated from electron guns 8 in the chamber 1 maintained in an ultrahigh vacuum by adjusting the angular position of the manipulator 3 so that the surface of the substrate 2 can face plowing-out units 4, 5, 6, and 7 related to individual retracting screens. Then the substrate 2 or epitaxial layer is maintained at such a sufficiently high temperature that can evaporate a resulted produce of the reaction between the element of the substrate 2 and the substance contained in the chemical beams with a thermocouple 18 which measures the heating filament of a supply tube 16.
申请公布号 JPH09129592(A) 申请公布日期 1997.05.16
申请号 JP19960211330 申请日期 1996.08.09
申请人 ALCATEL OPUTORONIKU 发明人 REON GOORUDOSUTAN;JIYANNRUI JIENNERU;FUIRITSUPU JIYARII
分类号 C30B23/08;C23F4/00;C30B23/02;H01L21/203;H01L21/302;(IPC1-7):H01L21/306 主分类号 C30B23/08
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