| 摘要 |
PURPOSE: To efficiently remove the heat generated at interconnections by forming through-holes through a first insulator located between low resistance- interconnections, the holes being composed of holes charged with a conductor and those with a second insulator having a higher thermal conductivity than that of the first insulator. CONSTITUTION: A semiconductor device has multilayer low-resistance metal interconnections 402 laminated through a first insulator 403 on the front and/or back surface of a conductive substrate 400. Through-holes are formed through the first insulators 403 and 305 at the interconnections 402 and 404 and composed of holes charged with at least a conductor and those with a second insulator having a higher thermal conductivity than that of the first insulator. This constitution enables quick transfer of the heat generated at the interconnection. By making an interlayer insulation film having a structure with interconnections having low capacitances, a high-speed and high-reliability semiconductor device can be obtained. |
