| 摘要 |
A field effect transistor (100) comprising an InP substrate (10) on which are deposited an InA1As buffer layer (11), an InGaAs channel layer (12), an InA1As spacer layer (13), an A1GaAs carrier supplying layer (14), an InA1As Schottky layer (15), and an InGaAs cap layer (16) in this order. In addition, a source electrode (17s), a drain electrode (17d), and a gate electrode (18) are formed at prescribed places on the top of this multilayer structure. The carrier supplying layer (14) is composed of a material in which the silicon as a dopant cannot be terminated by fluorine. Therefore, the field effect transistor (100) can have a high transconductance without causing a decrease in the drain current.
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