SEMICONDUCTOR HETEROSTRUCTURE RADIATION DETECTOR HAVING TWO SPECTRAL SENSITIVITY RANGES

摘要

The invention relates to a semiconductor heterostructure radiation detector which has two adjacent semiconductor layer regions, sensitive in different spectral regions, in which photons each with different energies can be absorbed which optically excite charge carriers present in the semiconductor layer regions in such a manner that a photocurrent can be generated in each semiconductor layer region in relation to an external electrical voltage applied via electrodes which are provided on the semiconductor heterostructure. The invention is characterised in that the one semiconductor layer region is a photodiode and the other is a quantum well intersub-band photodetector.