| 摘要 |
A semiconductor device has a local wiring section (20) which electrically connects a first layer (12) containing silicon to a second layer (16) containing silicon. The section (20) is provided with a first self-aligned metal silicide layer (22a) formed on the surface of the first layer (12), a second self-aligned metal silicide layer (22b) formed on the surface of the second layer (16), and a wiring section which electrically connects the first metal silicide layer (22a) to the second metal silicide layer (22b). The wiring section is constitued of a single or plurality of metallic layers (27), or the wiring section has a barrier layer (24) which is formed by the contact between the first and second metal silicide layers (22a and 22b), and a conductive layer (26) having a resistance lower than that of the barrier layer (24). Impurities hardly diffuse in the metal silicide or barrier layer, and hence the impurity concentration does not vary in layers in which silicon concentration is specified, for example, the source or drain region of a MOS device. Further, for example, the counter doping does not change the threshold value and the lowering of the impurity concentration does not increase the junction leak. Since the wiring section, in addition, has a conductive layer made of a conductive metal, the electric resistance of the section is smaller compared with a conventional titanium nitride layer. |
