Verfahren zur Herstellung eines Halbleiterbauelementes mit einer Grabenkapazität,申请号DE19906029465T-传众专利搜索

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发明名称	Verfahren zur Herstellung eines Halbleiterbauelementes mit einer Grabenkapazität
摘要
申请公布号	DE69029465(T2)	申请公布日期	1997.05.15
申请号	DE19906029465T	申请日期	1990.01.24
申请人	KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP	发明人	YAMAMOTO, TADASHI, C/O INTELLECTUAL PROPERTY DIV., MINATO-KU, TOKYO 105, JP;KOHYAMA, YUSUKE, C/O INTELLECTUAL PROPERTY DIV., MINATO-KU, TOKYO 105, JP;TANAKA, TAKESHI, C/O INTELLECTUAL PROPERTY DIV., MINATO-KU, TOKYO 105, JP
分类号	H01L21/334;H01L21/8242;(IPC1-7):H01L29/92;H01L21/82	主分类号	H01L21/334
代理机构		代理人
主权项
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