发明名称 Semiconductor device
摘要 A parasitic capacitance which is generated in a metal line by a molding compound material (38) is calculated, and defects which are caused by the parasitic capacitance is overcome by analyzing the calculated parasitic capacitance. The parasitic capacitance caused by the moulding material may be eliminated by ensuring that the thickness of the passivating layer (34) is greater than the height of the metal conductors (32), thus preventing the moulding material from encroaching between adjacent metal conductors.
申请公布号 GB2307101(A) 申请公布日期 1997.05.14
申请号 GB19960013883 申请日期 1996.07.02
申请人 * SAMSUNG ELECTRONICS CO LIMITED 发明人 MINKGU * SONG
分类号 H01L21/768;G02F1/136;H01L23/522;H01L29/786;(IPC1-7):H01L23/485;H01L21/823;H01L23/31 主分类号 H01L21/768
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