Phase shift layer - containing photomask, and its production and correction

摘要

A photomask blank for preparing a reticle for use in the production of integrated circuits comprises a substrate 30, an electrically conductive layer 31, a light-shielding thin film 32 and an ionizing radiation resist 33 formed of a coated spin-on-glass layer. A pattern is directly formed on the layer 33 by electron beam exposure. After development with a solvent to give a resist pattern 35 (Fig 1c) exposed portions of the light-shielding layer 32 are etched by an etching glass plasma 36 (Fig 1d) to form a light-shielding pattern 37. The remaining resist 33 is incinerated by oxygen plasma 38 (Fig 1e) to form a photomask (Fig 1f). Next, a transparent film 39 is spin-coated over the pattern 37 (Fig 1g), and pattern-exposed to electron beam radiation 40 (Fig 1h), baked (Fig 1i) and developed to form a reticle bearing a phase shift pattern 41 (Fig 1j). The correction of defects in the phase shift layer is also disclosed.