| 摘要 |
<p>The device (10) presents a polysilicon layer (36) extending over a wafer (20) of semiconductor material, along the edge of the active region (34) of the device, and partly over a thick field oxide layer (35) which externally delimits the active region. The polysilicon layer (36) forms both a field-plate region (37) at its inner edge, and a Zener protection diode (11) over the field oxide layer (35), outwards of and contiguous to the field-plate region (37). The terminals of the diode (11) are respectively connected to the source metal region (30) and the gate metal region (44); the diode (11) therefore extends along the whole of the perimeter of the device (10), and presents an extensive junction area without greatly reducing the active area of the device. <IMAGE> <IMAGE></p> |
