SEMICONDUCTOR COMPONENT WITH A HIGH BLOCKING CAPABILITY EDGE TERMINATION

摘要

PCT No. PCT/DE95/00935 Sec. 371 Date Mar. 27, 1996 Sec. 102(e) Date Mar. 27, 1996 PCT Filed Jul. 14, 1995 PCT Pub. No. WO96/03774 PCT Pub. Date Feb. 8, 1996An n- or p-doped semiconductor region accommodates the depletion zone of an active area of the semiconductor component with a vertical extension dependent upon an applied blocking voltage. The junction termination for the active area is constituted with a semiconductor doped oppositely to the semiconductor region, and is arranged immediately adjacently around the active area on or in a surface of the semiconductor region. The lateral extension of the junction termination is greater than the maximum vertical extension of the depletion zone, and the semiconductor region as well as the junction termination are constituted with a semiconductor with a band gap of at least 2 eV.