| 摘要 |
PROBLEM TO BE SOLVED: To prevent cracking in sintering, working, bonding, sputtering, etc., and to sinter a high-density monolithic large-sized target by controlling the relative density and residual stress of the sintered compact in a specified range. SOLUTION: When a monolithic sintered compact having >=1.0×10<4> mm<3> volume and consisting of In and O is produced, the relative density of the sintered compact is controlled to >=90%, and the residual stress (x) is limited to conform to -200<=x<=200MPa. Further, the sintered compact is allowed to contain >=0.1wt.% Sn. A mixed powder consisting of 85-100wt.% In2 O3 powder having 3-20m<2> /g BET surface area and the balance SnO2 powder and/or an ITO composite powder contg. >=0.1wt.% tin, consisting of In, S, and O and having 3 to 20m<2> /g BET surface area are used as the raw material to form a compact having >=45% density, and then the compact is sintered at 1,350-1,600 deg.C and cooled to room temp. at a rate of <=300 deg.C/h to produce the sintered compact. |
