Method for manufacturing microcrystalline cubic boron-nitride-layers

摘要

The method of the present invention provides in a simple manner, the deposition of boron nitride layers with microcrystalline cubic structure which are suitable as insulating layers in VLSI-circuits, as mask membranes in x-ray lithography, as well as coating hard substances. Due to the use of excited starting substances that already contain boron and nitrogen in one molecule and are preferably liquid or solid, and the use of a plasma-CVD-method, the method can be performed using in temperatures of below 500 DEG C. The excitation of the starting substance proceeds preferably in inductive or capacitative fashion in a hollow cathode.