发明名称 ITO SINTERED COMPACT FOR FORMING TRANSPARENT ELECTROCONDUCTIVE FILM AND ITS PRODUCTION
摘要 PROBLEM TO BE SOLVED: To provide the subject high-density sintered compact having uniform structure by mixing, forming and sintering indium oxide powder having a specified specific surface area with tin oxide powder having a specified specific surface area in production of ITO sintered compact substantially comprising In, Sn and O. SOLUTION: Indium oxide powder used in this method has >=15m<2> /g and <=20m<2> /g specific surface area. Tin oxide powder has >=3m<2> /g and <=50m<2> /g specific surface area. Tin oxide content is preferably >=0.5wt.% and <=20wt.%. Wet type mixing by ball mill, etc., using water, etc., as a dispersing medium is used as a method for mixing these two powders. The wet type mixing is preferable compared with dry type mixing, because aggregation of the powder is released in the wet type method and sintered compact having uniform structure is readily obtainable. The method for forming the mixed powder is not especially limited. The resultant formed article is sintered at 1300-1600 deg.C. Retention time at maximum temperature is preferably <=50hr. It is recommended that sintering atmosphere is not a reductive atmosphere. The resultant sintered compact has <=200&mu;m<2> second phase area and >=95% relative density.
申请公布号 JPH09124364(A) 申请公布日期 1997.05.13
申请号 JP19950305088 申请日期 1995.10.30
申请人 HITACHI METALS LTD 发明人 FUKUSHIMA HIDEKO;YAMADA NOBUYUKI;KIKUCHI HIROMI
分类号 C04B35/00;C04B35/457;C04B35/495;C23C14/34;H01B13/00 主分类号 C04B35/00
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