Positive electron beam resist composition containing cresolnovolak resin, select additive and methyl gallate/1,2-naphthoquinonediazido-4-sulfonyl chloride reaction product

摘要

PCT No. PCT/JP94/00720 Sec. 371 Date May 25, 1995 Sec. 102(e) Date May 25, 1995 PCT Filed Apr. 28, 1994 PCT Pub. No. WO94/25904 PCT Pub. Date Nov. 10, 1994The present invention relates to a positive electron beam resist composition containing a cresolnovolak resin, a lower molecular additive with a specific structure and a quinonediazide compound with a specific structure, and a developer for the positive electron beam resist, containing specific amounts of alkali metal ions, weak acid radical ions and a water soluble organic compound. The present invention can provide a positive electron beam resist composition with a novolak and a quinonediazide as main ingredients, excellent in dry etching resistance and resolution, and it if is used, a fine pattern can be obtained at high sensitivity especially when the developer of the present invention is used.