| 发明名称 |
Flash EEPROM memory with separate reference array |
| 摘要 |
A memory device including an array of cells, where a reference current is generated by a predetermined number of reference cells disposed separate from the array of cells, the transconductance of such reference cells being equal to the transconductance of the cells of the array.
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| 申请公布号 |
US5629892(A) |
申请公布日期 |
1997.05.13 |
| 申请号 |
US19950543684 |
申请日期 |
1995.10.16 |
| 申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
TANG, YUAN |
| 分类号 |
G11C16/06;G11C16/28;G11C16/34;G11C29/02;G11C29/50;(IPC1-7):G11C7/00 |
主分类号 |
G11C16/06 |
| 代理机构 |
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