发明名称 Process for planarizing surface of a semiconductor device
摘要 A layer planarizing method for a semiconductor device is provided to attain excellent controllability of a polishing amount to form a uniform and flat layer on a non-uniform wafer in polishing in a wafer surface. According to the method, a first layer is deposited over at least a top portion of a stepped portion formed on a surface of a body, the stepped portion covered with the first layer is covered with a second layer having a higher polishing rate than that of the first layer, and the second layer is polished until the first layer deposited on the top portion of the stepped portion is exposed.
申请公布号 US5629242(A) 申请公布日期 1997.05.13
申请号 US19950372942 申请日期 1995.01.17
申请人 SONY CORPORATION 发明人 NAGASHIMA, NAOKI;TAKAHASHI, HIROSHI
分类号 H01L21/31;H01L21/304;H01L21/3105;H01L21/316;H01L21/318;H01L21/3205;H01L21/76;H01L21/762;H01L21/768;H01L23/522;(IPC1-7):H01L21/304 主分类号 H01L21/31
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