发明名称 |
Process for planarizing surface of a semiconductor device |
摘要 |
A layer planarizing method for a semiconductor device is provided to attain excellent controllability of a polishing amount to form a uniform and flat layer on a non-uniform wafer in polishing in a wafer surface. According to the method, a first layer is deposited over at least a top portion of a stepped portion formed on a surface of a body, the stepped portion covered with the first layer is covered with a second layer having a higher polishing rate than that of the first layer, and the second layer is polished until the first layer deposited on the top portion of the stepped portion is exposed.
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申请公布号 |
US5629242(A) |
申请公布日期 |
1997.05.13 |
申请号 |
US19950372942 |
申请日期 |
1995.01.17 |
申请人 |
SONY CORPORATION |
发明人 |
NAGASHIMA, NAOKI;TAKAHASHI, HIROSHI |
分类号 |
H01L21/31;H01L21/304;H01L21/3105;H01L21/316;H01L21/318;H01L21/3205;H01L21/76;H01L21/762;H01L21/768;H01L23/522;(IPC1-7):H01L21/304 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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