发明名称 |
PROCESS OF MANUFACTURE OF SEMICONDUCTOR SENSITIVE ELEMENT |
摘要 |
FIELD: analytic instrumentation, branches of science and technology where analysis of gas and liquid media is necessary. SUBSTANCE: increased reliability of sensitive element os obtained by enhanced stability of electrophysical parameters of sensitive element thanks to fixation of catalytic particles and their protection against oxidation or poisoning with corrosive immeasurable components and to improved selectivity due to decreased access of immeasurable components of mixtures to sensitive element. process involves successive deposition of thin semiconductor layer and layer of metal-catalyst on dielectric thermally stable substrate, deposition of dielectric layer made from material permeable only for measured component on surface of layer of metalcatalyst. EFFECT: increased reliability of sensitive element. |
申请公布号 |
RU95107172(A) |
申请公布日期 |
1997.05.10 |
申请号 |
RU19950107172 |
申请日期 |
1995.05.04 |
申请人 |
RJABTSEV S.V.;SHAPOSHNIK A.V. |
发明人 |
RJABTSEV S.V.;SHAPOSHNIK A.V. |
分类号 |
G01N27/12 |
主分类号 |
G01N27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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