| 摘要 |
In producing a multilevel interconnection structure, an insulator film 18 is placed on and bonded to interconnecing lines 14 laid on an insulating layer 12 on a semiconductor substrate 10 such that all the spacings between the interconnecting lines are left as vacant spaces 16. For example, the insulator film 18 is a polyimide film or a silicon oxide film. The vacant spaces serve the purpose of reducing capacitance between adjacent interconnecting lines. After forming contact holes in the insulator film 18 and filling the contact holes with a metal 22, upper-level interconnecting lines 24 are laid on the insulator film. |
