Conductive runner fabrication for an integrated circuit

摘要

The method of forming runners having superior stress migration characteristics is disclosed. A blanket layer of conductive material 33 is deposited over a dielectric 31. A blanket layer is subjected to a blanket-etch back procedure, thereby reducing its thickness by approximately half. The remaining layer 35 is then patterned to form runners 41, 39. Resulting runners 41, 33 have a superior grain structure and greater resistance to electromigration and stress migration.