| 摘要 |
<p>Disclosed is a 1.3 mu m band lambda /4 shifted distributed-feedback type laser diode device, which has: an active layer with In1-xGaxAs1-yPy (0≤x<1, 0≤y<1) strained multiple quantum wells; wherein a resonator length of 300 to 600 mu m, a detuned quantity at room temperature of -15 to +15 nm and a quantum well number of 8 to 15 or a light confinement factor to quantum well layer of 3 to 10% are satisfied. <IMAGE></p> |
