Verfahren zum Bilden einer Metallverdrahtung einer Halbleitervorrichtung

摘要

A method for forming a metal wiring of a semiconductor device includes the steps of providing a semiconductor substrate 11, forming an insulating film 12 over the semiconductor substrate, forming a lower wiring 13 consisting of a polysilicon layer 13A and a tungsten silicide layer 13B on the insulating film, forming an interlayer insulating film 14 on the lower wiring in such a manner that the interlayer insulating film has a contact hole for partially exposing the tungsten silicide layer, implanting impurity ions in the exposed surface portion of the tungsten silicide layer 13B for the lower wiring in such a manner that the tungsten silicide layer has an amorphous portion, thermally treating the amorphous portion of the tungsten silicide layer, thereby crystallizing the amorphous tungsten silicide layer portion 16A, and forming an upper wiring 17. Since the polysilicon layer 17A of the upper wiring is formed over the crystalline tungsten silicide layer 16A, it is possible to suppress formation of a natural oxide film at the contact between the upper and lower wiring layers.