Method for forming a metal wire

摘要

A method for forming a metal wire in a semiconductor device, based on a repetitive process of depositing a thin TiN layer in contact with a lower conductive layer via the contact hole in a CVD process and plasma treating the surface of the TiN layer with N 2 , H 2 or a mixture gas thereof. This process removes carbon and oxygen impurities from the TiN layer and prevents void formation in the contact as well as minimizing contact resistance, thereby improving the yield of the metal wire process and the reliability of the semiconductor device.