发明名称 |
Semiconductor device providing preset output voltage |
摘要 |
The output voltage corresponds to a supply HV reaction to an internally generated signal. The module contains a semiconductor substrate (10), on which is formed a first region (IR1), containing a first MOSFET (101), whose drain receives the supply HV, while the preset output voltage is available at its source. On the substrate is formed a second region (IR2), insulated from the first one and containing a Zener diode (105), whose anode is coupled to the first MOSFET source, while its cathode is coupled to its gate. In the second region is formed a second MOSFET (103), whose drain is coupled to the first MOSFET gate while its source lies on earth.
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申请公布号 |
DE19614522(A1) |
申请公布日期 |
1997.05.07 |
申请号 |
DE1996114522 |
申请日期 |
1996.04.12 |
申请人 |
MITSUBISHI DENKI K.K., TOKIO/TOKYO, JP |
发明人 |
TERASHIMA, TOMOHIDE, TOKIO/TOKYO, JP |
分类号 |
H01L21/8249;H01L21/8222;H01L21/8248;H01L27/06;H03K17/567;(IPC1-7):H01L27/06;H01L23/58;H03K17/06 |
主分类号 |
H01L21/8249 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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