发明名称 Semiconductor device providing preset output voltage
摘要 The output voltage corresponds to a supply HV reaction to an internally generated signal. The module contains a semiconductor substrate (10), on which is formed a first region (IR1), containing a first MOSFET (101), whose drain receives the supply HV, while the preset output voltage is available at its source. On the substrate is formed a second region (IR2), insulated from the first one and containing a Zener diode (105), whose anode is coupled to the first MOSFET source, while its cathode is coupled to its gate. In the second region is formed a second MOSFET (103), whose drain is coupled to the first MOSFET gate while its source lies on earth.
申请公布号 DE19614522(A1) 申请公布日期 1997.05.07
申请号 DE1996114522 申请日期 1996.04.12
申请人 MITSUBISHI DENKI K.K., TOKIO/TOKYO, JP 发明人 TERASHIMA, TOMOHIDE, TOKIO/TOKYO, JP
分类号 H01L21/8249;H01L21/8222;H01L21/8248;H01L27/06;H03K17/567;(IPC1-7):H01L27/06;H01L23/58;H03K17/06 主分类号 H01L21/8249
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