| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device having an active layer of quantum well structure in which the deviation of carriers, excited to a high energy state by an external field or Auger effect, from a well layer to a barrier wall layer is controlled in the direction having no adverse effect on the operation of the element. SOLUTION: In a semiconductor heterostructure comprising first and second barrier wall layers 1, 2 sandwiching a quantum well layer 3, the height and effective mass of hetero barrier wall, as well and the material of barrier wall layers 1, 2 and quantum well layer 3, are set such that the carriers escape from the quantum well layer 3 toward the barrier wall layer 1 having a high effective mass when they are accelerated in the plane of the quantum well by Auger scattering to have energy higher than the hetero barrier wall. Since the deviation of high energy carriers from the quantum structure active layer to the barrier wall is controlled, a highly efficient low current operation can be ensured even if the temperature of the semiconductor laser is high. This structure enhances the high frequency characteristics of the FET. |
