SEMICONDUCTOR MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of stabilizing the threshold voltage value of a cell not selected. SOLUTION: String selective transistors 1, 2 are bonded among bit lines BL1 , BL2 and cell transistors 11 -1n , 21 -2n and ground selective transistors 3, 4 are combined among a common source line CS and the cell transistors 11 -1n , 21 -2n . The drain/source voltage of a cell transistor not selected is stepped up by a capacitor-coupling, passing voltage applied to a word line not selected at the time of programming is minimized, and stress by passing voltage is reduced by fitting program inhibition lines PIL1 -PILn and a large number of capacitors CPi connected among the program inhibition lines PIL1 -PILn and the corresponding source/drain regions of the cell transistors 11 -1n , 11 -2n . Accordingly, the performance and reliability of a semiconductor memory device are improved.