| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory in which an electric data can be rewritten for each block while reducing the memory size and cost. SOLUTION: A memory cell array is divided into a plurality of memory cell blocks (memory cell arrays) B1-Bm which are selected, along with the memory cells in the memory array, by selection means 37, 38, 39 and programmed by a program means. In each memory cell block, memory cells in one row are connected commonly with one of a plurality of row lines W11-W1n, W21-W2n,-..., and the memory cells in one column are connected commonly with one of a plurality of column lines. Each memory cell has a floating gate and a control gate and a data is stored depending on the charge accumulation state of floating gate. The memory cells are programmed for each block.</p> |
