Hall-effect sensor incorporated in a CMOS integrated circuit

摘要

The Hall-effect sensor HS' of the invention incorporated in a CMOS integrated circuit IC' is formed with a well 2' as the sensor active layer on a substrate 1'. Heavily doped regions 31', . . . , 34', in the well 2' are connected with sensor metal contacts 41', . . . , 44'. The upper plane S' of the substrate 1' is covered by a field oxide layer 5' the thickness thereof being between 0.8 mu m. and 1.0 mu m. Over the layer 5' in the region 50' surrounding the sensor contacts 41', . . . , 44', a polysilicon layer 6' is provided to block the disturbing influence of ions migrating in the field oxide layer 5'.